AS3BDHM3_A/I - DIODE AVALANCHE 200V 3A DO214AA

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE AVALANCHE 200V 3A DO214AA
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
3008275 Pieces
referans pri
USD 0.093264
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen AS3BDHM3_A/I nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou AS3BDHM3_A/I

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : AS3BDHM3_A/I
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 200V 3A DO214AA
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 3A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 20µA @ 600V
Kapasite @ Vr, F : 40pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : AS3B , AS3BDH

dokiman pou AS3BDHM3_A/I

pwodwi ki gen rapò pou AS3BDHM3_A/I Vishay Semiconductor Diodes Division

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