BSP318SH6327XTSA1 - MOSFET N-CH 60V 2.6A

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 60V 2.6A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1198990 Pieces
referans pri
USD 0.234
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSP318SH6327XTSA1 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou BSP318SH6327XTSA1

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : BSP318SH6327XTSA1
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 60V 2.6A
Seri : SIPMOS®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 90 mOhm @ 2.6A, 10V
Vgs (th) (Max) @ Id : 2V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 380pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.8W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-SOT223-4
Pake / Ka : TO-261-4, TO-261AA
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : BSP31 , BSP318SH

dokiman pou BSP318SH6327XTSA1

pwodwi ki gen rapò pou BSP318SH6327XTSA1 Infineon Technologies

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