SE12DBHM3/I - DIODE GEN PURP 100V 3.2A TO263AC

Fabricant Nimewo Pati

SE12DBHM3/I

Entèn Nimewo Pati

AX-SE12DBHM3/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 100V 3.2A TO263AC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1043180 Pieces

referans pri

~~USD 0.26895~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SE12DBHM3/I nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SE12DBHM3/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SE12DBHM3/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 100V 3.2A TO263AC

Seri : Automotive, AEC-Q101, eSMP®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 3.2A

Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 12A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 3µs

Kouran - Fèy Reverse @ Vr : 20µA @ 100V

Kapasite @ Vr, F : 90pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab) Variant

Pake Aparèy Founisè : TO-263AC (SMPD)

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SE1 , SE12D

dokiman pou SE12DBHM3/I

Fich : SE12DBHM3/I.pdf

pwodwi ki gen rapò pou SE12DBHM3/I Vishay Semiconductor Diodes Division

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