IRF7910TRPBF - MOSFET 2N-CH 12V 10A 8SOIC

Fabricant Nimewo Pati

IRF7910TRPBF

Entèn Nimewo Pati

AX-IRF7910TRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET 2N-CH 12V 10A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

697525 Pieces

referans pri

~~USD 0.402228~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRF7910TRPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRF7910TRPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRF7910TRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET 2N-CH 12V 10A 8SOIC

Seri : HEXFET®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A

RD sou (Max) @ Id, Vgs : 15 mOhm @ 8A, 4.5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 26nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 1730pF @ 6V

Pouvwa - Max : 2W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SO

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRF7 , IRF791

dokiman pou IRF7910TRPBF

Fich : IRF7910TRPBF.pdf

pwodwi ki gen rapò pou IRF7910TRPBF Infineon Technologies

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