TK31V60W5,LVQ - MOSFET N -CH 600V 30.8A DFN
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N -CH 600V 30.8A DFN
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
237720 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen TK31V60W5,LVQ nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou TK31V60W5,LVQ
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
TK31V60W5,LVQ
Fabricant :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N -CH 600V 30.8A DFN
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
109 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs :
105nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
3000pF @ 300V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
240W (Tc)
Operating Tanperati :
150°C (TA)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-DFN-EP (8x8)
Pake / Ka :
4-VSFN Exposed Pad
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou TK31V60W5,LVQ
Fich :
TK31V60W5,LVQ.pdf
pwodwi ki gen rapò pou TK31V60W5,LVQ Toshiba Semiconductor and Storage
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