2N6661JAN02 - MOSFET N-CH 90V 0.86A TO-205

Fabricant Nimewo Pati

2N6661JAN02

Entèn Nimewo Pati

AX-2N6661JAN02

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 90V 0.86A TO-205

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

67105 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 2N6661JAN02 nan stock pou vann.

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Espesifikasyon pou 2N6661JAN02

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : 2N6661JAN02

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 90V 0.86A TO-205

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 90V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 860mA (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V

Vgs (th) (Max) @ Id : 2V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 725mW (Ta), 6.25W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-39

Pake / Ka : TO-205AD, TO-39-3 Metal Can

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : 2N6 , 2N666

dokiman pou 2N6661JAN02

Fich : 2N6661JAN02.pdf

pwodwi ki gen rapò pou 2N6661JAN02 Vishay Siliconix

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