AS3PJHM3_A/H - DIODE AVALANCHE 600V 2.1A TO277A
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-AS3PJHM3_A/H
Fabricant
Kout Deskripsyon
DIODE AVALANCHE 600V 2.1A TO277A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1024550 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen AS3PJHM3_A/H nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou AS3PJHM3_A/H
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : AS3PJHM3_A/H
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 600V 2.1A TO277A
Seri : Automotive, AEC-Q101, eSMP®
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 2.1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.2µs
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : 37pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-277, 3-PowerDFN
Pake Aparèy Founisè : TO-277A (SMPC)
Operating Tanperati - Junction : -55°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou AS3PJHM3_A/H
Fich : AS3PJHM3_A/H.pdf
pwodwi ki gen rapò pou AS3PJHM3_A/H Vishay Semiconductor Diodes Division
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