JAN1N5553US - DIODE GEN PURP 800V 3A B-MELF

Fabricant Nimewo Pati

JAN1N5553US

Entèn Nimewo Pati

AX-JAN1N5553US

Fabricant

Microsemi Corporation

Kout Deskripsyon

DIODE GEN PURP 800V 3A B-MELF

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

36267 Pieces

referans pri

~~USD 10.8273~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen JAN1N5553US nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou JAN1N5553US

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : JAN1N5553US

Fabricant : Microsemi Corporation

Deskripsyon : DIODE GEN PURP 800V 3A B-MELF

Seri : Military, MIL-PRF-19500/420

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 800V

Kouran - Mwayèn Rèktifye (Io) : 3A

Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 9A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 2µs

Kouran - Fèy Reverse @ Vr : 1µA @ 800V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : SQ-MELF, B

Pake Aparèy Founisè : D-5B

Operating Tanperati - Junction : -65°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : JAN , JAN1N

dokiman pou JAN1N5553US

Fich : JAN1N5553US.pdf

pwodwi ki gen rapò pou JAN1N5553US Microsemi Corporation

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