RD3S100CNTL1 - NCH 190V 10A POWER MOSFET

Fabricant Nimewo Pati

RD3S100CNTL1

Entèn Nimewo Pati

AX-RD3S100CNTL1

Fabricant

Rohm Semiconductor

Kout Deskripsyon

NCH 190V 10A POWER MOSFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

530160 Pieces

referans pri

~~USD 0.5292~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RD3S100CNTL1 nan stock pou vann.

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Espesifikasyon pou RD3S100CNTL1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RD3S100CNTL1

Fabricant : Rohm Semiconductor

Deskripsyon : NCH 190V 10A POWER MOSFET

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 190V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V

RD sou (Max) @ Id, Vgs : 182 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 52nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2000pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 85W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RD3S , RD3S10

dokiman pou RD3S100CNTL1

Fich : RD3S100CNTL1.pdf

pwodwi ki gen rapò pou RD3S100CNTL1 Rohm Semiconductor

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