NVD5865NLT4G - MOSFET N-CH 60V 10A DPAK-4

Fabricant Nimewo Pati

NVD5865NLT4G

Entèn Nimewo Pati

AX-NVD5865NLT4G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 60V 10A DPAK-4

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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Espesifikasyon pou NVD5865NLT4G

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NVD5865NLT4G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 60V 10A DPAK-4

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta), 46A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 16 mOhm @ 19A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1400pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.1W (Ta), 71W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DPAK

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NVD5 , NVD586

dokiman pou NVD5865NLT4G

Fich : NVD5865NLT4G.pdf

pwodwi ki gen rapò pou NVD5865NLT4G ON Semiconductor

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