SQJ952EP-T1_GE3 - MOSFET 2 N-CH 60V POWERPAK SO8

Fabricant Nimewo Pati

SQJ952EP-T1_GE3

Entèn Nimewo Pati

AX-SQJ952EP-T1_GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2 N-CH 60V POWERPAK SO8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

855460 Pieces

referans pri

~~USD 0.327966~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQJ952EP-T1_GE3 nan stock pou vann.

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Espesifikasyon pou SQJ952EP-T1_GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SQJ952EP-T1_GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2 N-CH 60V POWERPAK SO8

Seri : Automotive, AEC-Q101, TrenchFET®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Tc)

RD sou (Max) @ Id, Vgs : 20 mOhm @ 10.3A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 1800pF @ 30V

Pouvwa - Max : 25W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : PowerPAK® SO-8 Dual

Pake Aparèy Founisè : PowerPAK® SO-8 Dual

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SQJ95 , SQJ952E

dokiman pou SQJ952EP-T1_GE3

Fich : SQJ952EP-T1_GE3.pdf

pwodwi ki gen rapò pou SQJ952EP-T1_GE3 Vishay Siliconix

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GRM0225C1E5R6DDAEL	Murata Electronics North America	CAP CER 5.6PF 25V C0G/NP0 01005.
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WF165278WP60238BJ1	Vishay Beyschlag	CAP CER 6000PF 20KV SCREW.
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WF135272WL60238BJ2	Vishay Beyschlag	CAP CER 6000PF 16KV SCREW.
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