PMFPB8032XP,115 - MOSFET P-CH 20V 2.7A HUSON6

Fabricant Nimewo Pati

PMFPB8032XP,115

Entèn Nimewo Pati

AX-PMFPB8032XP,115

Fabricant

Nexperia USA Inc.

Kout Deskripsyon

MOSFET P-CH 20V 2.7A HUSON6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1584030 Pieces

referans pri

~~USD 0.17712~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen PMFPB8032XP,115 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PMFPB8032XP,115

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PMFPB8032XP,115

Fabricant : Nexperia USA Inc.

Deskripsyon : MOSFET P-CH 20V 2.7A HUSON6

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.7A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V

RD sou (Max) @ Id, Vgs : 102 mOhm @ 2.7A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 8.6nC @ 4.5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 550pF @ 10V

Karakteristik FET : Schottky Diode (Isolated)

Disipasyon Pouvwa (Max) : 485mW (Ta), 6.25W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-HUSON-EP (2x2)

Pake / Ka : 6-UDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PMFPB , PMFPB80

dokiman pou PMFPB8032XP,115

Fich : PMFPB8032XP,115.pdf

pwodwi ki gen rapò pou PMFPB8032XP,115 Nexperia USA Inc.

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