TN0110N3-G-P002 - MOSFET N-CH 100V 350MA TO92-3

Fabricant Nimewo Pati

TN0110N3-G-P002

Entèn Nimewo Pati

AX-TN0110N3-G-P002

Fabricant

Microchip Technology

Kout Deskripsyon

MOSFET N-CH 100V 350MA TO92-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

630535 Pieces

referans pri

~~USD 0.44496~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TN0110N3-G-P002 nan stock pou vann.

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Espesifikasyon pou TN0110N3-G-P002

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TN0110N3-G-P002

Fabricant : Microchip Technology

Deskripsyon : MOSFET N-CH 100V 350MA TO92-3

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 350mA (Tj)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 2V @ 500µA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 60pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-92-3

Pake / Ka : TO-226-3, TO-92-3 (TO-226AA)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TN011 , TN0110N

dokiman pou TN0110N3-G-P002

Fich : TN0110N3-G-P002.pdf

pwodwi ki gen rapò pou TN0110N3-G-P002 Microchip Technology

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