IXFA130N10T2 - MOSFET N-CH 100V 130A TO-263AA

Fabricant Nimewo Pati

IXFA130N10T2

Entèn Nimewo Pati

AX-IXFA130N10T2

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 100V 130A TO-263AA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

153935 Pieces

referans pri

~~USD 1.82256~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXFA130N10T2 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXFA130N10T2

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXFA130N10T2

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 100V 130A TO-263AA

Seri : GigaMOS™, HiPerFET™, TrenchT2™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 130A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 9.1 mOhm @ 65A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 130nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 6600pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 360W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263 (IXFA)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXFA , IXFA13

dokiman pou IXFA130N10T2

Fich : IXFA130N10T2.pdf

pwodwi ki gen rapò pou IXFA130N10T2 IXYS

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