FDN8601 - MOSFET N-CH 100V 2.7A 3SSOT

Fabricant Nimewo Pati

FDN8601

Entèn Nimewo Pati

AX-FDN8601

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 2.7A 3SSOT

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1214560 Pieces

referans pri

~~USD 0.231~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDN8601 nan stock pou vann.

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Espesifikasyon pou FDN8601

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDN8601

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 2.7A 3SSOT

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.7A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 109 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 210pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.5W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SuperSOT-3

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDN

dokiman pou FDN8601

Fich : FDN8601.pdf

pwodwi ki gen rapò pou FDN8601 ON Semiconductor

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