DMP10H4D2S-13 - MOSFET P-CH 100V 0.27A SOT23

Fabricant Nimewo Pati

DMP10H4D2S-13

Entèn Nimewo Pati

AX-DMP10H4D2S-13

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET P-CH 100V 0.27A SOT23

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

5222325 Pieces

referans pri

~~USD 0.053724~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen DMP10H4D2S-13 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DMP10H4D2S-13

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMP10H4D2S-13

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET P-CH 100V 0.27A SOT23

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 270mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V

RD sou (Max) @ Id, Vgs : 4.2 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 1.8nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 87pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 380mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-23-3

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMP1 , DMP10H

dokiman pou DMP10H4D2S-13

Fich : DMP10H4D2S-13.pdf

pwodwi ki gen rapò pou DMP10H4D2S-13 Diodes Incorporated

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