IGB01N120H2ATMA1 - IGBT 1200V 3.2A 28W TO263-3-2

Fabricant Nimewo Pati

IGB01N120H2ATMA1

Entèn Nimewo Pati

AX-IGB01N120H2ATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

IGBT 1200V 3.2A 28W TO263-3-2

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

595100 Pieces

referans pri

~~USD 0.471456~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IGB01N120H2ATMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IGB01N120H2ATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IGB01N120H2ATMA1

Fabricant : Infineon Technologies

Deskripsyon : IGBT 1200V 3.2A 28W TO263-3-2

Seri : -

Estati Pati : Not For New Designs

Kalite IGBT : -

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 3.2A

Kouran - Pèseptè batman (Icm) : 3.5A

Vce (sou) (Max) @ Vge, Ic : 2.8V @ 15V, 1A

Pouvwa - Max : 28W

Oblije chanje enèji : 140µJ

Kalite Antre : Standard

Gate chaje : 8.6nC

Td (on / off) @ 25 ° C : 13ns/370ns

Kondisyon egzamen an : 800V, 1A, 241 Ohm, 15V

Ranvèse Tan Reverse (trr) : -

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : PG-TO263-3-2

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IGB01 , IGB01N12

dokiman pou IGB01N120H2ATMA1

Fich : IGB01N120H2ATMA1.pdf

pwodwi ki gen rapò pou IGB01N120H2ATMA1 Infineon Technologies

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