FQD12N20TM_F080 - MOSFET N-CH 200V 9A DPAK

Fabricant Nimewo Pati

FQD12N20TM_F080

Entèn Nimewo Pati

AX-FQD12N20TM_F080

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 200V 9A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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Espesifikasyon pou FQD12N20TM_F080

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQD12N20TM_F080

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 200V 9A DPAK

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 280 mOhm @ 4.5A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 23nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 910pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 55W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D-Pak

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQD12 , FQD12N2

dokiman pou FQD12N20TM_F080

Fich : FQD12N20TM_F080.pdf

pwodwi ki gen rapò pou FQD12N20TM_F080 ON Semiconductor

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