FQD7N10TM - MOSFET N-CH 100V 5.8A DPAK

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 100V 5.8A DPAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
6248 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQD7N10TM nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
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Espesifikasyon pou FQD7N10TM

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FQD7N10TM
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 5.8A DPAK
Seri : QFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 350 mOhm @ 2.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 7.5nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 250pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 25W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : FQD , FQD7

dokiman pou FQD7N10TM

Fich : FQD7N10TM.pdf

pwodwi ki gen rapò pou FQD7N10TM ON Semiconductor

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