SI1402DH-T1-GE3 - MOSFET N-CH 30V 2.7A SOT363

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Entèn Nimewo Pati
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Kout Deskripsyon
MOSFET N-CH 30V 2.7A SOT363
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Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
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11216 Pieces
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Espesifikasyon pou SI1402DH-T1-GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI1402DH-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 2.7A SOT363
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 77 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 1.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.5nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 950mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SC-70-6 (SOT-363)
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI140 , SI1402D

dokiman pou SI1402DH-T1-GE3

pwodwi ki gen rapò pou SI1402DH-T1-GE3 Vishay Siliconix

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