SPI11N65C3XKSA1 - MOSFET N-CH 650V 11A TO-262

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 650V 11A TO-262
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Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
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9188 Pieces
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USD 0
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- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SPI11N65C3XKSA1 nan stock pou vann.
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Espesifikasyon pou SPI11N65C3XKSA1

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SPI11N65C3XKSA1
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 650V 11A TO-262
Seri : CoolMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 380 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1200pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 125W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3-1
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SPI11 , SPI11N6

dokiman pou SPI11N65C3XKSA1

pwodwi ki gen rapò pou SPI11N65C3XKSA1 Infineon Technologies

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