H11A617B - OPTOISO 5.3KV TRANSISTOR 4DIP

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
OPTOISO 5.3KV TRANSISTOR 4DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
50394 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen H11A617B nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
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Espesifikasyon pou H11A617B

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : H11A617B
Fabricant : ON Semiconductor
Deskripsyon : OPTOISO 5.3KV TRANSISTOR 4DIP
Seri : -
Estati Pati : Obsolete
Kantite chanèl yo : 1
Voltage - Izolasyon : 5300Vrms
Pwopòsyon Transfè Kouran (Min) : 63% @ 10mA
Pwopòsyon aktyèl transfè (Max) : 125% @ 10mA
Vire sou / Vire Off Tan (Tip) : -
Rise / Fall Time (Tip) : 2.4µs, 2.4µs
Kalite Antre : DC
Kalite Sòti : Transistor
Voltage - Sòti (Max) : 70V
Kouran - Sòti / Chèn : 50mA
Voltage - Forward (Vf) (Tip) : 1.35V
Kouran - DC Forward (Si) (Max) : 50mA
Vce saturation (Max) : 400mV
Operating Tanperati : -55°C ~ 100°C
Mounting Kalite : Through Hole
Pake / Ka : 4-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 4-DIP
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : H1 , H11A

dokiman pou H11A617B

Fich : H11A617B.pdf

pwodwi ki gen rapò pou H11A617B ON Semiconductor

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