ES07B-GS18 - DIODE GEN PURP 100V 1.2A DO219AB

Fabricant Nimewo Pati

ES07B-GS18

Entèn Nimewo Pati

AX-ES07B-GS18

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 100V 1.2A DO219AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4606960 Pieces

referans pri

~~USD 0.0609~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ES07B-GS18 nan stock pou vann.

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Espesifikasyon pou ES07B-GS18

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : ES07B-GS18

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 100V 1.2A DO219AB

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 1.2A

Voltage - Forward (Vf) (Max) @ Si : 980mV @ 1A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 25ns

Kouran - Fèy Reverse @ Vr : 10µA @ 100V

Kapasite @ Vr, F : 4pF @ 4V, 50MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-219AB

Pake Aparèy Founisè : DO-219AB (SMF)

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : ES0 , ES07B

dokiman pou ES07B-GS18

Fich : ES07B-GS18.pdf

pwodwi ki gen rapò pou ES07B-GS18 Vishay Semiconductor Diodes Division

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