VS-2EGH01-M3/5BT - DIODE GEN PURP 100V 2A DO214AA

Fabricant Nimewo Pati

VS-2EGH01-M3/5BT

Entèn Nimewo Pati

AX-VS-2EGH01-M3/5BT

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 100V 2A DO214AA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2845875 Pieces

referans pri

~~USD 0.098586~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen VS-2EGH01-M3/5BT nan stock pou vann.

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Espesifikasyon pou VS-2EGH01-M3/5BT

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : VS-2EGH01-M3/5BT

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 100V 2A DO214AA

Seri : FRED Pt®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 2A

Voltage - Forward (Vf) (Max) @ Si : 900mV @ 2A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 23ns

Kouran - Fèy Reverse @ Vr : 2µA @ 100V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : DO-214AA, SMB

Pake Aparèy Founisè : DO-214AA (SMBJ)

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : VS-2E , VS-2EGH0

dokiman pou VS-2EGH01-M3/5BT

Fich : VS-2EGH01-M3/5BT.pdf

pwodwi ki gen rapò pou VS-2EGH01-M3/5BT Vishay Semiconductor Diodes Division

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