SI4936CDY-T1-E3 - MOSFET 2N-CH 30V 5.8A 8SO

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 30V 5.8A 8SO
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1724210 Pieces
referans pri
USD 0.16272
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI4936CDY-T1-E3 nan stock pou vann.
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Espesifikasyon pou SI4936CDY-T1-E3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI4936CDY-T1-E3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 30V 5.8A 8SO
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.8A
RD sou (Max) @ Id, Vgs : 40 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 325pF @ 15V
Pouvwa - Max : 2.3W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI493 , SI4936C

dokiman pou SI4936CDY-T1-E3

pwodwi ki gen rapò pou SI4936CDY-T1-E3 Vishay Siliconix

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