MVDF2C03HDR2G - MOSFET N/P-CH 30V 4.1A/3A 8SOIC

Fabricant Nimewo Pati

MVDF2C03HDR2G

Entèn Nimewo Pati

AX-MVDF2C03HDR2G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

29162 Pieces

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~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou MVDF2C03HDR2G

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Nimewo pati : MVDF2C03HDR2G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N/P-CH 30V 4.1A/3A 8SOIC

Seri : -

Estati Pati : Obsolete

FET Kalite : N and P-Channel Complementary

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.1A, 3A

RD sou (Max) @ Id, Vgs : 70 mOhm @ 3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 630pF @ 24V

Pouvwa - Max : 2W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SOIC

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MVDF , MVDF2C

dokiman pou MVDF2C03HDR2G

Fich : MVDF2C03HDR2G.pdf

pwodwi ki gen rapò pou MVDF2C03HDR2G ON Semiconductor

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