STH80N10F7-2 - MOSFET N-CH 100V 80A H2PAK-2

Fabricant Nimewo Pati

STH80N10F7-2

Entèn Nimewo Pati

AX-STH80N10F7-2

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 100V 80A H2PAK-2

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

319855 Pieces

referans pri

~~USD 0.877152~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen STH80N10F7-2 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou STH80N10F7-2

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STH80N10F7-2

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 100V 80A H2PAK-2

Seri : DeepGATE™, STripFET™ VII

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 9.5 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3100pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 110W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : H2Pak-2

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STH8 , STH80N

dokiman pou STH80N10F7-2

Fich : STH80N10F7-2.pdf

pwodwi ki gen rapò pou STH80N10F7-2 STMicroelectronics

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