STH110N10F7-6 - MOSFET N-CH 100V 110A H2PAK-6

Fabricant Nimewo Pati

STH110N10F7-6

Entèn Nimewo Pati

AX-STH110N10F7-6

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 100V 110A H2PAK-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

62145 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen STH110N10F7-6 nan stock pou vann.

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Espesifikasyon pou STH110N10F7-6

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STH110N10F7-6

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 100V 110A H2PAK-6

Seri : DeepGATE™, STripFET™ VII

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 110A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 6.5 mOhm @ 55A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 72nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5117pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 150W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : H2PAK-6

Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STH1 , STH110

dokiman pou STH110N10F7-6

Fich : STH110N10F7-6.pdf

pwodwi ki gen rapò pou STH110N10F7-6 STMicroelectronics

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