IRF7701GTRPBF - MOSFET P-CH 12V 10A 8-TSSOP

Fabricant Nimewo Pati

IRF7701GTRPBF

Entèn Nimewo Pati

AX-IRF7701GTRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH 12V 10A 8-TSSOP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6008 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRF7701GTRPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRF7701GTRPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRF7701GTRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH 12V 10A 8-TSSOP

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 11 mOhm @ 10A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 5050pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.5W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSSOP

Pake / Ka : 8-TSSOP (0.173", 4.40mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRF7 , IRF770

dokiman pou IRF7701GTRPBF

Fich : IRF7701GTRPBF.pdf

pwodwi ki gen rapò pou IRF7701GTRPBF Infineon Technologies

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