EPC2012C - GANFET TRANS 200V 5A BUMPED DIE

Fabricant Nimewo Pati

EPC2012C

Entèn Nimewo Pati

AX-EPC2012C

Fabricant

EPC

Kout Deskripsyon

GANFET TRANS 200V 5A BUMPED DIE

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

392940 Pieces

referans pri

~~USD 0.714~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EPC2012C nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou EPC2012C

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : EPC2012C

Fabricant : EPC

Deskripsyon : GANFET TRANS 200V 5A BUMPED DIE

Seri : eGaN®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : GaNFET (Gallium Nitride)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 1.3nC @ 5V

Vgs (Max) : +6V, -4V

Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Die Outline (4-Solder Bar)

Pake / Ka : Die

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : EP , EPC2

dokiman pou EPC2012C

Fich : EPC2012C.pdf

pwodwi ki gen rapò pou EPC2012C EPC

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