EPC2012C - GANFET TRANS 200V 5A BUMPED DIE
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-EPC2012C
Fabricant
Kout Deskripsyon
GANFET TRANS 200V 5A BUMPED DIE
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
392940 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen EPC2012C nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou EPC2012C
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
EPC2012C
Fabricant :
EPC
Deskripsyon :
GANFET TRANS 200V 5A BUMPED DIE
Seri :
eGaN®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
1.3nC @ 5V
Vgs (Max) :
+6V, -4V
Antre kapasite (Ciss) (Max) @ Vds :
140pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die Outline (4-Solder Bar)
Pake / Ka :
Die
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou EPC2012C
Fich :
EPC2012C.pdf
pwodwi ki gen rapò pou EPC2012C EPC
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