EPC2012C - GANFET TRANS 200V 5A BUMPED DIE

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
GANFET TRANS 200V 5A BUMPED DIE
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
392940 Pieces
referans pri
USD 0.714
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EPC2012C nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou EPC2012C

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : EPC2012C
Fabricant : EPC
Deskripsyon : GANFET TRANS 200V 5A BUMPED DIE
Seri : eGaN®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 1.3nC @ 5V
Vgs (Max) : +6V, -4V
Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Die Outline (4-Solder Bar)
Pake / Ka : Die
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : EP , EPC2

dokiman pou EPC2012C

Fich : EPC2012C.pdf

pwodwi ki gen rapò pou EPC2012C EPC

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