AR3PJHM3_A/I - DIODE AVALANCHE 600V 1.8A TO277A

Fabricant Nimewo Pati

AR3PJHM3_A/I

Entèn Nimewo Pati

AX-AR3PJHM3_A/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE AVALANCHE 600V 1.8A TO277A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

956245 Pieces

referans pri

~~USD 0.2934~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen AR3PJHM3_A/I nan stock pou vann.

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Espesifikasyon pou AR3PJHM3_A/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : AR3PJHM3_A/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE AVALANCHE 600V 1.8A TO277A

Seri : Automotive, AEC-Q101, eSMP®

Estati Pati : Active

Kalite dyòd : Avalanche

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 1.8A

Voltage - Forward (Vf) (Max) @ Si : 1.6V @ 3A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 140ns

Kouran - Fèy Reverse @ Vr : 10µA @ 600V

Kapasite @ Vr, F : 44pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : TO-277, 3-PowerDFN

Pake Aparèy Founisè : TO-277A (SMPC)

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : AR3P , AR3PJH

dokiman pou AR3PJHM3_A/I

Fich : AR3PJHM3_A/I.pdf

pwodwi ki gen rapò pou AR3PJHM3_A/I Vishay Semiconductor Diodes Division

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