FDG6301N - MOSFET 2N-CH 25V 0.22A SC70-6

Fabricant Nimewo Pati

FDG6301N

Entèn Nimewo Pati

AX-FDG6301N

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2N-CH 25V 0.22A SC70-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3467600 Pieces

referans pri

~~USD 0.08091~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDG6301N nan stock pou vann.

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Espesifikasyon pou FDG6301N

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDG6301N

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2N-CH 25V 0.22A SC70-6

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 220mA

RD sou (Max) @ Id, Vgs : 4 Ohm @ 220mA, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 0.4nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 9.5pF @ 10V

Pouvwa - Max : 300mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-TSSOP, SC-88, SOT-363

Pake Aparèy Founisè : SC-88 (SC-70-6)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDG6

dokiman pou FDG6301N

Fich : FDG6301N.pdf

pwodwi ki gen rapò pou FDG6301N ON Semiconductor

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