ISL9R18120S3ST - DIODE GEN PURP 1.2KV 18A TO263-2

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE GEN PURP 1.2KV 18A TO263-2
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
296300 Pieces
referans pri
USD 0.946878
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ISL9R18120S3ST nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou ISL9R18120S3ST

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : ISL9R18120S3ST
Fabricant : ON Semiconductor
Deskripsyon : DIODE GEN PURP 1.2KV 18A TO263-2
Seri : Stealth™
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 18A
Voltage - Forward (Vf) (Max) @ Si : 3.3V @ 18A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 300ns
Kouran - Fèy Reverse @ Vr : 100µA @ 1200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -55°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : ISL9 , ISL9R18

dokiman pou ISL9R18120S3ST

pwodwi ki gen rapò pou ISL9R18120S3ST ON Semiconductor

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