1N8035-GA - DIODE SCHOTTKY 650V 14.6A TO276

Fabricant Nimewo Pati

1N8035-GA

Entèn Nimewo Pati

AX-1N8035-GA

Fabricant

GeneSiC Semiconductor

Kout Deskripsyon

DIODE SCHOTTKY 650V 14.6A TO276

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

18136 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 1N8035-GA nan stock pou vann.

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Espesifikasyon pou 1N8035-GA

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : 1N8035-GA

Fabricant : GeneSiC Semiconductor

Deskripsyon : DIODE SCHOTTKY 650V 14.6A TO276

Seri : -

Estati Pati : Obsolete

Kalite dyòd : Silicon Carbide Schottky

Voltage - DC Ranvèse (Vr) (Max) : 650V

Kouran - Mwayèn Rèktifye (Io) : 14.6A (DC)

Voltage - Forward (Vf) (Max) @ Si : 1.5V @ 15A

Vitès : No Recovery Time > 500mA (Io)

Ranvèse Tan Reverse (trr) : 0ns

Kouran - Fèy Reverse @ Vr : 5µA @ 650V

Kapasite @ Vr, F : 1107pF @ 1V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : TO-276AA

Pake Aparèy Founisè : TO-276

Operating Tanperati - Junction : -55°C ~ 250°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : 1N8 , 1N80

dokiman pou 1N8035-GA

Fich : 1N8035-GA.pdf

pwodwi ki gen rapò pou 1N8035-GA GeneSiC Semiconductor

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