TK10J80E,S1E - MOSFET N-CH 800V TO-3PN

Fabricant Nimewo Pati

TK10J80E,S1E

Entèn Nimewo Pati

AX-TK10J80E,S1E

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 800V TO-3PN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

188060 Pieces

referans pri

~~USD 1.49184~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TK10J80E,S1E nan stock pou vann.

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Espesifikasyon pou TK10J80E,S1E

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TK10J80E,S1E

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 800V TO-3PN

Seri : π-MOSVIII

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1 Ohm @ 5A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 46nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 2000pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 250W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-3P(N)

Pake / Ka : TO-3P-3, SC-65-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TK10 , TK10J8

dokiman pou TK10J80E,S1E

Fich : TK10J80E,S1E.pdf

pwodwi ki gen rapò pou TK10J80E,S1E Toshiba Semiconductor and Storage

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