FDB0260N1007L - MOSFET N-CH 100V 200A D2PAK

Fabricant Nimewo Pati

FDB0260N1007L

Entèn Nimewo Pati

AX-FDB0260N1007L

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 200A D2PAK

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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119605 Pieces

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~~USD 2.345706~~

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Espesifikasyon pou FDB0260N1007L

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDB0260N1007L

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 200A D2PAK

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.6 mOhm @ 27A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 118nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 8545pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.8W (Ta), 250W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263)

Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDB0 , FDB026

dokiman pou FDB0260N1007L

Fich : FDB0260N1007L.pdf

pwodwi ki gen rapò pou FDB0260N1007L ON Semiconductor

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