1N5407GHA0G - DIODE GEN PURP 800V 3A DO201AD

Fabricant Nimewo Pati

1N5407GHA0G

Entèn Nimewo Pati

AX-1N5407GHA0G

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

DIODE GEN PURP 800V 3A DO201AD

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6285040 Pieces

referans pri

~~USD 0.04464~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 1N5407GHA0G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou 1N5407GHA0G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : 1N5407GHA0G

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : DIODE GEN PURP 800V 3A DO201AD

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 800V

Kouran - Mwayèn Rèktifye (Io) : 3A

Voltage - Forward (Vf) (Max) @ Si : 1V @ 3A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 5µA @ 800V

Kapasite @ Vr, F : 25pF @ 4V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : DO-201AD, Axial

Pake Aparèy Founisè : DO-201AD

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : 1N5 , 1N540

dokiman pou 1N5407GHA0G

Fich : 1N5407GHA0G.pdf

pwodwi ki gen rapò pou 1N5407GHA0G Taiwan Semiconductor Corporation

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