IRF1104L - MOSFET N-CH 40V 100A TO-262

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 40V 100A TO-262
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
63590 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRF1104L nan stock pou vann.
D 'opsyon ak anbake tan:
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou IRF1104L

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IRF1104L
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 40V 100A TO-262
Seri : HEXFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 9 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 93nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.4W (Ta), 170W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-262
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IR , IRF1

dokiman pou IRF1104L

Fich : IRF1104L.pdf

pwodwi ki gen rapò pou IRF1104L Infineon Technologies

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