SQJ200EP-T1_GE3 - MOSFET 2N-CH 20V 20A/60A PPAK SO

Fabricant Nimewo Pati

SQJ200EP-T1_GE3

Entèn Nimewo Pati

AX-SQJ200EP-T1_GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 20V 20A/60A PPAK SO

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

948870 Pieces

referans pri

~~USD 0.29568~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQJ200EP-T1_GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SQJ200EP-T1_GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SQJ200EP-T1_GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 20V 20A/60A PPAK SO

Seri : Automotive, AEC-Q101, TrenchFET®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A, 60A

RD sou (Max) @ Id, Vgs : 8.8 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 975pF @ 10V

Pouvwa - Max : 27W, 48W

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : PowerPAK® SO-8 Dual

Pake Aparèy Founisè : PowerPAK® SO-8 Dual Asymmetric

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SQJ20 , SQJ200E

dokiman pou SQJ200EP-T1_GE3

Fich : SQJ200EP-T1_GE3.pdf

pwodwi ki gen rapò pou SQJ200EP-T1_GE3 Vishay Siliconix

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BZ114096WZ10238BK1	Vishay Beyschlag	CAP CER 1000PF 40KV AXIAL.
WF095187WJ10238BH1	Vishay Beyschlag	CAP CER 1000PF 14KV SCREW.
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