RJK6012DPE-00#J3 - MOSFET N-CH 600V 10A LDPAK

Fabricant Nimewo Pati

RJK6012DPE-00#J3

Entèn Nimewo Pati

AX-RJK6012DPE-00#J3

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 600V 10A LDPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

17408 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RJK6012DPE-00#J3 nan stock pou vann.

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Espesifikasyon pou RJK6012DPE-00#J3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RJK6012DPE-00#J3

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 600V 10A LDPAK

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 920 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 100W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 4-LDPAK

Pake / Ka : SC-83

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RJK60 , RJK6012D

dokiman pou RJK6012DPE-00#J3

Fich : RJK6012DPE-00#J3.pdf

pwodwi ki gen rapò pou RJK6012DPE-00#J3 Renesas Electronics America

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