TPC6012(TE85L,F,M) - MOSFET N-CH 20V 6A VS6

Fabricant Nimewo Pati

TPC6012(TE85L,F,M)

Entèn Nimewo Pati

AX-TPC6012(TE85L,F,M)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 20V 6A VS6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

12808 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TPC6012(TE85L,F,M) nan stock pou vann.

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Espesifikasyon pou TPC6012(TE85L,F,M)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPC6012(TE85L,F,M)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 20V 6A VS6

Seri : U-MOSIV

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 20 mOhm @ 3A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 200µA

Chaje Gate (Qg) (Max) @ Vgs : 9nC @ 5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 630pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : VS-6 (2.9x2.8)

Pake / Ka : SOT-23-6 Thin, TSOT-23-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPC601 , TPC6012(T

dokiman pou TPC6012(TE85L,F,M)

Fich : TPC6012(TE85L,F,M).pdf

pwodwi ki gen rapò pou TPC6012(TE85L,F,M) Toshiba Semiconductor and Storage

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