VS-GB200TH120N - IGBT 1200V 360A 1136W INT-A-PAK

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
IGBT 1200V 360A 1136W INT-A-PAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9117 Pieces
referans pri
USD 282.937002
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen VS-GB200TH120N nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou VS-GB200TH120N

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : VS-GB200TH120N
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT 1200V 360A 1136W INT-A-PAK
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 360A
Pouvwa - Max : 1136W
Vce (sou) (Max) @ Vge, Ic : 2.35V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 14.9nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Double INT-A-PAK (3 + 4)
Pake Aparèy Founisè : Double INT-A-PAK
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : VS-G , VS-GB20

dokiman pou VS-GB200TH120N

pwodwi ki gen rapò pou VS-GB200TH120N Vishay Semiconductor Diodes Division

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