MBR2H200SFT1G - DIODE SCHOTTKY 200V 2A SOD123FL

Fabricant Nimewo Pati

MBR2H200SFT1G

Entèn Nimewo Pati

AX-MBR2H200SFT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

DIODE SCHOTTKY 200V 2A SOD123FL

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6168955 Pieces

referans pri

~~USD 0.04548~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MBR2H200SFT1G nan stock pou vann.

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Espesifikasyon pou MBR2H200SFT1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : MBR2H200SFT1G

Fabricant : ON Semiconductor

Deskripsyon : DIODE SCHOTTKY 200V 2A SOD123FL

Seri : -

Estati Pati : Active

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 200V

Kouran - Mwayèn Rèktifye (Io) : 2A

Voltage - Forward (Vf) (Max) @ Si : 940mV @ 2A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 200µA @ 200V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : SOD-123F

Pake Aparèy Founisè : SOD-123FL

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MBR2 , MBR2H2

dokiman pou MBR2H200SFT1G

Fich : MBR2H200SFT1G.pdf

pwodwi ki gen rapò pou MBR2H200SFT1G ON Semiconductor

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