SI1972DH-T1-E3 - MOSFET 2N-CH 30V 1.3A SC70-6

Fabricant Nimewo Pati

SI1972DH-T1-E3

Entèn Nimewo Pati

AX-SI1972DH-T1-E3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 30V 1.3A SC70-6

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Plon gratis / RoHS Konfòm

akouchman Tan

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Espesifikasyon pou SI1972DH-T1-E3

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Nimewo pati : SI1972DH-T1-E3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 30V 1.3A SC70-6

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.3A

RD sou (Max) @ Id, Vgs : 225 mOhm @ 1.3A, 10V

Vgs (th) (Max) @ Id : 2.8V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 2.8nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 75pF @ 15V

Pouvwa - Max : 1.25W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-TSSOP, SC-88, SOT-363

Pake Aparèy Founisè : SC-70-6 (SOT-363)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI19 , SI1972D

dokiman pou SI1972DH-T1-E3

Fich : SI1972DH-T1-E3.pdf

pwodwi ki gen rapò pou SI1972DH-T1-E3 Vishay Siliconix

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