RFD4N06LSM9A - MOSFET N-CH 60V 4A DPAK

Fabricant Nimewo Pati

RFD4N06LSM9A

Entèn Nimewo Pati

AX-RFD4N06LSM9A

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 60V 4A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

69955 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RFD4N06LSM9A nan stock pou vann.

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Espesifikasyon pou RFD4N06LSM9A

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RFD4N06LSM9A

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 60V 4A DPAK

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V

RD sou (Max) @ Id, Vgs : 600 mOhm @ 1A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 8nC @ 10V

Vgs (Max) : ±10V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 30W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252AA

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RFD4 , RFD4N0

dokiman pou RFD4N06LSM9A

Fich : RFD4N06LSM9A.pdf

pwodwi ki gen rapò pou RFD4N06LSM9A ON Semiconductor

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