RJM0603JSC-00#13 - MOSFET 3N/3P-CH 60V 20A HSOP
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 3N/3P-CH 60V 20A HSOP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
32690 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen RJM0603JSC-00#13 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou RJM0603JSC-00#13
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
RJM0603JSC-00#13
Fabricant :
Renesas Electronics America
Deskripsyon :
MOSFET 3N/3P-CH 60V 20A HSOP
Seri :
Automotive, AEC-Q101
Estati Pati :
Obsolete
FET Kalite :
3 N and 3 P-Channel (3-Phase Bridge)
Karakteristik FET :
Logic Level Gate, 4.5V Drive
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A
RD sou (Max) @ Id, Vgs :
20 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
43nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2600pF @ 10V
Pouvwa - Max :
54W
Operating Tanperati :
175°C
Mounting Kalite :
Surface Mount
Pake / Ka :
20-SOIC (0.433", 11.00mm Width) Exposed Pad
Pake Aparèy Founisè :
20-HSOP
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou RJM0603JSC-00#13
Fich :
RJM0603JSC-00#13.pdf
pwodwi ki gen rapò pou RJM0603JSC-00#13 Renesas Electronics America
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