FQI2N80TU - MOSFET N-CH 800V 2.4A I2PAK

Fabricant Nimewo Pati

FQI2N80TU

Entèn Nimewo Pati

AX-FQI2N80TU

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 800V 2.4A I2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

70400 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQI2N80TU nan stock pou vann.

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Espesifikasyon pou FQI2N80TU

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQI2N80TU

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 800V 2.4A I2PAK

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 6.3 Ohm @ 900mA, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 550pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.13W (Ta), 85W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQI , FQI2

dokiman pou FQI2N80TU

Fich : FQI2N80TU.pdf

pwodwi ki gen rapò pou FQI2N80TU ON Semiconductor

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