FDN5618P_G - INTEGRATED CIRCUIT

Fabricant Nimewo Pati

FDN5618P_G

Entèn Nimewo Pati

AX-FDN5618P_G

Fabricant

ON Semiconductor

Kout Deskripsyon

INTEGRATED CIRCUIT

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

22043 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDN5618P_G nan stock pou vann.

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Espesifikasyon pou FDN5618P_G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDN5618P_G

Fabricant : ON Semiconductor

Deskripsyon : INTEGRATED CIRCUIT

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.25A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 170 mOhm @ 1.25A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 13.8nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 430pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 500mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SuperSOT-3

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDN , FDN56

dokiman pou FDN5618P_G

Fich : FDN5618P_G.pdf

pwodwi ki gen rapò pou FDN5618P_G ON Semiconductor

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