JAN1N6622US - DIODE GEN PURP 660V 2A D5A

Fabricant Nimewo Pati

JAN1N6622US

Entèn Nimewo Pati

AX-JAN1N6622US

Fabricant

Microsemi Corporation

Kout Deskripsyon

DIODE GEN PURP 660V 2A D5A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

44478 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen JAN1N6622US nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou JAN1N6622US

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : JAN1N6622US

Fabricant : Microsemi Corporation

Deskripsyon : DIODE GEN PURP 660V 2A D5A

Seri : Military, MIL-PRF-19500/585

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 660V

Kouran - Mwayèn Rèktifye (Io) : 1.2A

Voltage - Forward (Vf) (Max) @ Si : 1.4V @ 1.2A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 30ns

Kouran - Fèy Reverse @ Vr : 500nA @ 660V

Kapasite @ Vr, F : 10pF @ 10V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : SQ-MELF, A

Pake Aparèy Founisè : D-5A

Operating Tanperati - Junction : -65°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : JAN , JAN1N

dokiman pou JAN1N6622US

Fich : JAN1N6622US.pdf

pwodwi ki gen rapò pou JAN1N6622US Microsemi Corporation

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