AIHD04N60RFATMA1 - IC DISCRETE 600V TO252-3

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
IC DISCRETE 600V TO252-3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
696815 Pieces
referans pri
USD 0.402636
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen AIHD04N60RFATMA1 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou AIHD04N60RFATMA1

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : AIHD04N60RFATMA1
Fabricant : Infineon Technologies
Deskripsyon : IC DISCRETE 600V TO252-3
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 8A
Kouran - Pèseptè batman (Icm) : 12A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 4A
Pouvwa - Max : 75W
Oblije chanje enèji : 60µJ (on), 50µJ (off)
Kalite Antre : Standard
Gate chaje : 27nC
Td (on / off) @ 25 ° C : 12ns/116ns
Kondisyon egzamen an : 400V, 4A, 43 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : PG-TO252-3-313
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : AIHD0 , AIHD04N6

dokiman pou AIHD04N60RFATMA1

pwodwi ki gen rapò pou AIHD04N60RFATMA1 Infineon Technologies

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